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S1807 SemiConductor - CASE: TO92 MAKE: Toshiba

Toshiba . S1807

Attributes

Brand name, Manufacturer name, ManufacturerToshiba
keywordsBuy S1807, S1807, S1807 SemiConductor
moq, multiple1
MPN, SKUS1807
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetS1807 SemiConductor - CASE: TO92 MAKE: Toshiba
CaseTO92
TypeTransistor Silicon PNP
Vbr CBO35
Vbr CEO30
Max PD (W)625m
C(ob) (F)13p
hfe320=
Ic Max (A)800m
PolarityPNP
Trans Freq (Hz) Min120M
@VCE (test) (V)1.0
@Ic (A)100m
Pinout Equivalence Number3-12
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)0.625 W
Maximum Collector-Base Voltage |Vcb|35 V
Maximum Collector-Emitter Voltage |Vce|30 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|0.8 A
Max Operating Junction Temperature (Tj)150 ?C
Collector Capacitance (Cc)13 pF
Transition Frequency (ft):120 MHz
Forward Current Transfer Ratio (hFE), MIN100

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