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S1806 SemiConductor - CASE: TO92 MAKE: Toshiba

Toshiba . S1806

Attributes

Brand name, Manufacturer name, ManufacturerToshiba
keywordsBuy S1806, S1806, S1806 SemiConductor
moq, multiple1
MPN, SKUS1806
originalCurrency{'currency': 'GBP'}
qtyInStock0
snippetS1806 SemiConductor - CASE: TO92 MAKE: Toshiba
CaseTO92
TypeTransistor Silicon PNP
Vbr CBO40
Vbr CEO30
Max PD (W)625m
Derate (Amb) (W/?C)4.0m
hfe, Forward Current Transfer Ratio (hFE), MIN70
Ic Max (A)500m
Icbo Max @Vcb Max (A)100n
PolarityPNP
Trans Freq (Hz) Min300M
@VCE (test) (V)1.0
Oper Temp (?C) Max140
@Ic (A)50m
Pinout Equivalence Number3-12
Surface Mounted Yes/NoNO
Maximum Collector Power Dissipation (Pc)0.625 W
Maximum Collector-Base Voltage |Vcb|40 V
Maximum Collector-Emitter Voltage |Vce|30 V
Maximum Emitter-Base Voltage |Veb|5 V
Maximum Collector Current |Ic max|0.5 A
Max Operating Junction Temperature (Tj)150 ?C

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Little DiodeS180611