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ON Semiconductor . FGA6540WDF

ON Semiconductor . FGA6540WDF

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Attributes

Brand name, Manufacturer nameON Semiconductor
ManufacturerON Semiconductor Fairchild Semiconductor
minimum, moq, multiple, tierMinQty1450
MPN, Part Number, Keyword, ModelNumber, Model_number, PartNumber, Part_numberFGA6540WDF
qtyInStock0
SKUFGA6540WDF-ND
tierPrice12.52451
Product Group, ProductGroup, ProductTypeNameBISS
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
AsinB0137KU2IE B0137KW0BQ B07QPQJDRD
BrandFairchild Semiconductor ON Semiconductor
Case, NumberOfItems, PackageQuantity1 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
ClassificationId306831011
DisplayNameSemiconductor Products
Feature<b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Fairchild Semiconductor <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 650 V <b>Collector-Emitter Saturation Voltage</b>: 1.8 V <b>Maximum Gate Emitter Voltage</b>: 20 V <b>Continuous Collector Current at 25 C</b>: 80 A <b>Gate-Emitter Leakage Current</b>: 400 nA <b>Power Dissipation</b>: 238 W <b>Maximum Operating Temperature</b>: + 175 C <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Fairchild Semiconductor <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 650 V <b>Collector-Emitter Saturation Voltage</b>: 1.8 V <b>Maximum Gate Emitter Voltage</b>: 20 V <b>Continuous Collector Current at 25 C</b>: 80 A <b>Gate-Emitter Leakage Current</b>: 400 nA <b>Power Dissipation</b>: 238 W <b>Maximum Operating Temperature</b>: + 175 C
Height, Width150 75
Identifier7447228015066
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameFGA6540WDF, Trans IGBT Chip N-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3PN Tube (10 Items)
Item_type_keywordelectronic-semiconductor-products
Label, Man, Publisher, StudioFairchild Semiconductor
Linkhttps://m.media-amazon.com/images/I/11AoSeMTHVL._SL75_.jpg https://m.media-amazon.com/images/I/11AoSeMTHVL.jpg
Number_of_items10
ProductTypeELECTRONIC_COMPONENT
Product_descriptionFGA6540WDF, Trans IGBT Chip N-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3PN Tube (10 items)
Product_site_launch_date2019-04-15T20:55:05.281Z
Size1 pack 50 pack
TitleIGBT Transistors 650V FS Gen3 Trench IGBT (1 piece) IGBT Transistors 650V FS Gen3 Trench IGBT (50 pieces)
Typeean
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-KeyFGA6540WDF-ND450450450 @ $2.52
Future Electronics4059524450450450 @ $2.02
HotendaH1848773144911 @ $4.46, 10 @ $4.01, 100 @ $3.28, 500 @ $2.79
Win SourceFGA6540WDF1441
iodPartsFGA6540WDF13091
Digi-Key1343232311145 @ $2.08
Newark45Y51331201201 @ $0.00
Digi-Key1564485711
Digi-Key512516511

Related on Amazon

As an Amazon Associate, we earn from qualifying purchases. (paid link) CERTAIN CONTENT THAT APPEARS ON THIS SITE COMES FROM AMAZON. THIS CONTENT IS PROVIDED 'AS IS' AND IS SUBJECT TO CHANGE OR REMOVAL AT ANY TIME.

IGBT Transistors 650V FS Gen3 Trench IGBT (1 piece)
Brand: Fairchild Semiconductor
Catalog
Feature<b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Fairchild Semiconductor <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 650 V <b>Collector-Emitter Saturation Voltage</b>: 1.8 V <b>Maximum Gate Emitter Voltage</b>: 20 V <b>Continuous Collector Current at 25 C</b>: 80 A <b>Gate-Emitter Leakage Current</b>: 400 nA <b>Power Dissipation</b>: 238 W <b>Maximum Operating Temperature</b>: + 175 C
CategoryIndustrial & Scientific
MPNFGA6540WDF
Product groupBISS
Product typeBISS
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
IGBT Transistors 650V FS Gen3 Trench IGBT (50 pieces)
Brand: Fairchild Semiconductor
Catalog
Feature<b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Fairchild Semiconductor <b>Product Category</b>: IGBT Transistors <b>RoHS</b>: <b>Configuration</b>: Single <b>Collector- Emitter Voltage VCEO Max</b>: 650 V <b>Collector-Emitter Saturation Voltage</b>: 1.8 V <b>Maximum Gate Emitter Voltage</b>: 20 V <b>Continuous Collector Current at 25 C</b>: 80 A <b>Gate-Emitter Leakage Current</b>: 400 nA <b>Power Dissipation</b>: 238 W <b>Maximum Operating Temperature</b>: + 175 C
CategoryIndustrial & Scientific
MPNFGA6540WDF
Product groupBISS
Product typeBISS
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
FGA6540WDF, Trans IGBT Chip N-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3PN Tube (10 Items)
Brand: ON Semiconductor
FGA6540WDF, Trans IGBT Chip N-CH 650V 80A 238000mW 3-Pin(3+Tab) TO-3PN Tube (10 items)
View on Amazon (paid link)