ONSEMI . KSD2012GTU
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 23AC6019 | 1 | 1 | ||
| Newark | 29H0522 | 1 | 1 | ||
| 1052629 | 1 | 1021 | 1 | 1 @ $1.24, 10 @ $1.11, 100 @ $0.86, 500 @ $0.71, 1000 @ $0.56, 2000 @ $0.52, 5000 @ $0.50, 10000 @ $0.48 | |
| RS Delivers | 806-2762 | 1 | 1250 | 1 | 1 @ $1.30 |
| Digi-Key | 15640839 | 1 | 1 | 735 @ $0.41 | |
 Digi-Key | KSD2012GTU-ND | 1 | 1000 | 1 @ $0.90, 10 @ $0.80, 25 @ $0.75, 100 @ $0.54, 250 @ $0.52, 500 @ $0.45, 1000 @ $0.39, 2500 @ $0.36 | |
 Radwell | KSD2012GTU | 1000 | 1000 | 1 @ $0.44 | |
| Future Electronics | 4045745 | 2000 | 2000 | 2000 @ $0.36, 2000 @ $0.31 |
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Transistors Bipolar - BJT NPN Si Transistor Epitaxial (10 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 3 MHz DC Collector/Base Gain hfe Min: 100 |
|---|---|
| Category | Industrial & Scientific |
| MPN | KSD2012GTU |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (100 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 3 MHz DC Collector/Base Gain hfe Min: 100 |
|---|---|
| Category | Industrial & Scientific |
| MPN | KSD2012GTU |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (1000 pieces)
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | KSD2012GTU |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (5 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 3 MHz DC Collector/Base Gain hfe Min: 100 |
|---|---|
| Category | Industrial & Scientific |
| MPN | KSD2012GTU |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (50 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 3 MHz DC Collector/Base Gain hfe Min: 100 |
|---|---|
| Category | Industrial & Scientific |
| MPN | KSD2012GTU |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (500 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 3 MHz DC Collector/Base Gain hfe Min: 100 |
|---|---|
| Category | Industrial & Scientific |
| MPN | KSD2012GTU |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
Transistors Bipolar - BJT NPN Si Transistor Epitaxial (1 piece)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: Transistors Bipolar - BJT RoHS: Configuration: Single Transistor Polarity: NPN Collector- Base Voltage VCBO: 60 V Collector- Emitter Voltage VCEO Max: 60 V Emitter- Base Voltage VEBO: 7 V Collector-Emitter Saturation Voltage: 0.4 V Maximum DC Collector Current: 3 A Gain Bandwidth Product fT: 3 MHz DC Collector/Base Gain hfe Min: 100 |
|---|---|
| Category | Industrial & Scientific |
| MPN | KSD2012GTU |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |