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VISHAY . SI7478DP-T1-GE3

Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY SILICONIX (VISHAY) Vishay
extendedQty, qtyInStock0
moq, multiple, Item_package_quantity, PackageQuantity1
MPN, Part Number, Model, Keyword, ModelNumber, Model_number, PartNumber, Part_numberSI7478DP-T1-GE3
qtySourceupdateFromUrlEntry
Product GroupBISS
ASIN, AsinB0748LSHKD B09T67FW21
AdultProduct, Autographed, Memorabilia, TradeInEligibleFalse
Brand, Label, Publisher, StudioSILICONIX (VISHAY) Vishay
Bullet_pointChannelType: N-Channel Drain-sourceOnResistance-Max: 0.0075 Ω QgGateCharge: 160 nC RatedPowerDissipation(P): 1.9 W VoltageDraintoSource: 60 V
Case3000
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
ClassificationId306919011
DisplayNameMOSFET
Externally_assigned_product_identifier, Identifier6098002231250
FeatureChannelType: N-Channel
FetchTime1625725282 1651495847 1676314263 1683626007 1704477035
Height150 243 56 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_name, TitleSI7478DP-T1-GE3, Trans MOSFET N-CH 60V 15A 8-Pin PowerPAK SO T/R (25 Items) SILICONIX (VISHAY) SI7478DP-T1-GE3 Single N-Channel 60 V 0.0075 Ohm Surface Mount Power Mosfet - PowerPAK-SO-8 - 3000 item(s)
Item_type_keywordmosfet-transistors
Item_weight0.32
Linkhttps://m.media-amazon.com/images/I/11Wo7Lolq7L._SL75_.jpg https://m.media-amazon.com/images/I/11Wo7Lolq7L.jpg https://m.media-amazon.com/images/I/211YGjsq57L._SL75_.jpg https://m.media-amazon.com/images/I/211YGjsq57L.jpg
ManSILICONIX (VISHAY)
Marketplace_idATVPDKIKX0DER
NumberOfItems, Number_of_items25 3000
ProductGroup, WebsiteDisplayGroupNameBISS BISS Basic
ProductType, ProductTypeNameELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Process Technology: TrenchFET Configuration: Single Quad Drain Triple Source Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 15 Maximum Drain Source Resistance (mOhm): 7.5@10V Typical Gate Charge @ Vgs (nC): 105@10V Typical Gate Charge @ 10V (nC): 105 Maximum Power Dissipation (mW): 1900 Typical Fall Time (ns): 45 Typical Rise Time (ns): 20 Typical Turn-Off Delay Time (ns): 115 Typical Turn-On Delay Time (ns): 25 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead Single N-Channel 60 V 0.0075 Ohm Surface Mount Power Mosfet - PowerPAK-SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-07-26T15:53:37.261Z 2022-02-18T20:15:36.031Z
Typeean
URLhttps://m.media-amazon.com/images/I/11Wo7Lolq7L._SL75_.jpg https://m.media-amazon.com/images/I/211YGjsq57L._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website biss_display_on_website
Weight0.0007054792384
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark15R521111
1SourceSI7478DP-T1-GE311
RadwellSI7478DP-T1-GE330003000
Digi-Key1995755111 @ $3.43, 10 @ $3.08, 100 @ $2.48, 500 @ $2.03, 1000 @ $1.74, 3000 @ $1.74
Future Electronics103611830003000
HotendaH18075121300011 @ $0.92

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SILICONIX (VISHAY) SI7478DP-T1-GE3 Single N-Channel 60 V 0.0075 Ohm Surface Mount Power Mosfet - PowerPAK-SO-8 - 3000 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 60 V 0.0075 Ohm Surface Mount Power Mosfet - PowerPAK-SO-8 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel
  • VoltageDraintoSource: 60 V
  • Drain-sourceOnResistance-Max: 0.0075 Ω
  • QgGateCharge: 160 nC
  • RatedPowerDissipation(P): 1.9 W
Listing
Product groupBISS
Product typeELECTRONIC_COMPONENT
ModelSI7478DP-T1-GE3
Part numberSI7478DP-T1-GE3
Items per pack3000
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
Catalog
FeatureChannelType: N-Channel
CategoryIndustrial & Scientific
MPNSI7478DP-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
SI7478DP-T1-GE3, Trans MOSFET N-CH 60V 15A 8-Pin PowerPAK SO T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Process Technology: TrenchFET Configuration: Single Quad Drain Triple Source Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 15 Maximum Drain Source Resistance (mOhm): 7.5@10V Typical Gate Charge @ Vgs (nC): 105@10V Typical Gate Charge @ 10V (nC): 105 Maximum Power Dissipation (mW): 1900 Typical Fall Time (ns): 45 Typical Rise Time (ns): 20 Typical Turn-Off Delay Time (ns): 115 Typical Turn-On Delay Time (ns): 25 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: PowerPAK SO Pin Count: 8 Mounting: Surface Mount Package Height: 1.07(Max) Package Length: 4.9 Package Width: 5.89 PCB changed: 8 Lead Shape: No Lead
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
ModelSI7478DP-T1-GE3
Part numberSI7478DP-T1-GE3
Items per pack25
LabelVishay
ManufacturerVishay
View on Amazon (paid link)