Vishay P-Channel 1.5V (G-S) Mosfet Rohs Compliant: No - SI1499DH-T1-GE3
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MOSFET P-CH 8V 1.6A SC-70-6 (1 piece)
Brand: Vishay / Siliconix
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>Series:</b> TrenchFET\xc3'\xc2\xae <b>FET Type:</b> MOSFET P-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 8V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 1.6A (Tc) <b>Rds On (Max) @ Id, Vgs:</b> 78 mOhm @ 2A, 4.5V <b>Vgs(th) (Max) @ Id:</b> 800mV @ 250\xc3'\xc2\xb5A <b>Gate Charge (Qg) @ Vgs:</b> 16nC @ 4.5V <b>Input Capacitance (Ciss) @ Vds:</b> 650pF @ 4V" |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI1499DH-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Siliconix |
MOSFET -8V -1.6A 2.78W (1 piece)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 1 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 1.6 A <b>Vds - Drain-Source Breakdown Voltage</b>: - 8 V <b>Rds On - Drain-Source Resistance</b>: 78 mOhms <b>Transistor Polarity</b>: P-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 5 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI1499DH-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET -8V -1.6A 2.78W (10 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 10 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 1.6 A <b>Vds - Drain-Source Breakdown Voltage</b>: - 8 V <b>Rds On - Drain-Source Resistance</b>: 78 mOhms <b>Transistor Polarity</b>: P-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 5 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI1499DH-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET -8V -1.6A 2.78W (100 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 100 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 1.6 A <b>Vds - Drain-Source Breakdown Voltage</b>: - 8 V <b>Rds On - Drain-Source Resistance</b>: 78 mOhms <b>Transistor Polarity</b>: P-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 5 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI1499DH-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET -8V -1.6A 2.78W (5 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 5 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 1.6 A <b>Vds - Drain-Source Breakdown Voltage</b>: - 8 V <b>Rds On - Drain-Source Resistance</b>: 78 mOhms <b>Transistor Polarity</b>: P-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 5 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI1499DH-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
MOSFET -8V -1.6A 2.78W (50 pieces)
Brand: Vishay Semiconductors
Catalog
| Feature | <b>Price For:</b> Pack of 50 <b>Manufacturer</b>: Vishay <b>Product Category</b>: MOSFET <b>RoHS</b>: <b>Brand</b>: Vishay Semiconductors <b>Id - Continuous Drain Current</b>: 1.6 A <b>Vds - Drain-Source Breakdown Voltage</b>: - 8 V <b>Rds On - Drain-Source Resistance</b>: 78 mOhms <b>Transistor Polarity</b>: P-Channel <b>Vgs - Gate-Source Breakdown Voltage</b>: 5 V <b>Maximum Operating Temperature</b>: + 150 C <b>Pd - Power Dissipation</b>: 2.5 W |
|---|---|
| Category | Industrial & Scientific |
| MPN | SI1499DH-T1-GE3 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | Vishay Semiconductors |
SI1499DH-T1-GE3, Trans MOSFET P-CH 8V 1.6A 6-Pin SC-70 T/R (250 Items)
Brand: Vishay
EU RoHS: Compliant ECCN (US): EAR99 Part Status: NRND HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Quad Drain Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 8 Maximum Gate Source Voltage (V): ±5 Maximum Continuous Drain Current (A): 1.6 Maximum Drain Source Resistance (mOhm): 78@4.5V Typical Gate Charge @ Vgs (nC): 10.5@4.5V Typical Input Capacitance @ Vds (pF): 650@4V Maximum Power Dissipation (mW): 2500 Typical Fall Time (ns): 60 Typical Rise Time (ns): 40 Typical Turn-Off Delay Time (ns): 46 Typical Turn-On Delay Time (ns): 8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: SC-70 Pin Count: 6 Standard Package Name: SC Mounting: Surface Mount Package Height: 1(Max) Package Length: 2 Package Width: 1.25 PCB changed: 6 Lead Shape: Gull-wing