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on-semiconductor . NTB6410ANG

on-semiconductor . NTB6410ANG

Attributes

Brand name, Manufacturer nameon-semiconductor
Manufactureron-semiconductor ON Semiconductor
extendedQty, qtyInStock0
moq, multiple1
MPN, Part Number, PartNumberNTB6410ANG
qtySourceupdateFromUrlEntry
Product GroupBISS
ASINB00M2CS77W
AsinB00LWKUC6E B00LWKUGBU B00LWKUJJY B00LWKUMXW B00M2CRZPM B00M2CS77W
Brand, Label, Man, Publisher, StudioON Semiconductor
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 863-NTB6410ANG X1 MS 863-NTB6410ANG X10 MS 863-NTB6410ANG X100 MS 863-NTB6410ANG X5 MS 863-NTB6410ANG X50
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 76 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 188 W Mounting Style: SMD/SMT
FetchTime1567805817
Height59
ProductGroupBISS BISS Basic
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET NFET D2PAK 100V 76A 13MOH (1 piece) MOSFET NFET D2PAK 100V 76A 13MOH (10 pieces) MOSFET NFET D2PAK 100V 76A 13MOH (100 pieces) MOSFET NFET D2PAK 100V 76A 13MOH (5 pieces) MOSFET NFET D2PAK 100V 76A 13MOH (50 pieces) NTB6410ANG
URLhttp://ecx.images-amazon.com/images/I/21lCjNX9P9L._SL75_.jpg
Unitspixels
Width75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark64R560411
1SourceNTB6410ANG11
Allied Electronics7046750011
RadwellNTB6410ANG300300
Digi-Key230567411
Digi-Key115570561308444130130 @ $1.93
RS Delivers802-100511
Win SourceNTB6410ANG1200001
HotendaH183285211

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MOSFET NFET D2PAK 100V 76A 13MOH (10 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 76 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 188 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNNTB6410ANG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET D2PAK 100V 76A 13MOH (100 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 76 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 188 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNNTB6410ANG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET D2PAK 100V 76A 13MOH (5 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 76 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 188 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNNTB6410ANG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET D2PAK 100V 76A 13MOH (50 pieces)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 76 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 188 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNNTB6410ANG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
MOSFET NFET D2PAK 100V 76A 13MOH (1 piece)
Brand: ON Semiconductor
Catalog
FeatureManufacturer: ON Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 100 V Id - Continuous Drain Current: 76 A Rds On - Drain-Source Resistance: 11 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 2 V to 4 V Qg - Gate Charge: 120 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 188 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNNTB6410ANG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)
NTB6410ANG
Brand: ON Semiconductor
Listing
Product groupBISS Basic
Product typeELECTRONIC_COMPONENT
Part numberNTB6410ANG
LabelON Semiconductor
ManufacturerON Semiconductor
Catalog
CategoryIndustrial & Scientific
MPNNTB6410ANG
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerON Semiconductor
View on Amazon (paid link)