VISHAY . IRL520PBF

MOSFET Transistor, N Channel, 9.2 A, 100 V, 270 mohm, 5 V, 2 V RoHS Compliant: Yes

VISHAY IRL520PBF MOSFET Transistor, N Channel, 9.2 A, 100 V, 270 mohm, 5 V, 2 V

VISHAY IRL520PBF MOSFET Transistor, N Channel, 9.2 A, 100 V, 270 mohm, 5 V, 2 V

VISHAY IRL520PBF MOSFET Transistor, N Channel, 9.2 A, 100 V, 270 mohm, 5 V, 2 V

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.10.00.80 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 100 Maximum Gate Source Voltage (V): ±10 Maximum Gate Threshold Voltage (V): 2 Operating Junction Temperature (°C): -55 to 175 Maximum Continuous Drain Current (A): 9.2 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 270@5V Typical Gate Charge @ Vgs (nC): 12(Max)@5V Typical Gate to Drain Charge (nC): 7.1(Max) Typical Gate to Source Charge (nC): 3(Max) Typical Reverse Recovery Charge (nC): 830 Typical Input Capacitance @ Vds (pF): 490@25V Typical Reverse Transfer Capacitance @ Vds (pF): 30@25V Minimum Gate Threshold Voltage (V): 1 Typical Output Capacitance (pF): 150 Maximum Power Dissipation (mW): 60000 Typical Fall Time (ns): 27 Typical Rise Time (ns): 64 Typical Turn-Off Delay Time (ns): 21 Typical Turn-On Delay Time (ns): 9.8 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Maximum Positive Gate Source Voltage (V): 10 Maximum Pulsed Drain Current @ TC=25°C (A): 36 Typical Gate Plateau Voltage (V): 3.9 Typical Reverse Recovery Time (ns): 130 Maximum Diode Forward Voltage (V): 2.5 Supplier Package: TO-220AB Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 9.14(Max) Package Length: 10.52(Max) Package Width: 4.65(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole