Vishay N Channel Mosfet, 60V, 10A - IRFZ10PBF

N CHANNEL MOSFET, 60V, 10A; Transistor Polarity:N Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:10A; On Resistance Rds(on):0.2ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; No. of Pins:3PinsRoHS Compliant: Yes

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Obsolete HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 10 Maximum Drain Source Resistance (mOhm): 200@10V Typical Gate Charge @ Vgs (nC): 11(Max)@10V Typical Gate Charge @ 10V (nC): 11(Max) Typical Gate to Drain Charge (nC): 5.8(Max) Typical Gate to Source Charge (nC): 3.1(Max) Typical Reverse Recovery Charge (nC): 200 Typical Input Capacitance @ Vds (pF): 300@25V Typical Output Capacitance (pF): 160 Maximum Power Dissipation (mW): 43000 Typical Fall Time (ns): 19 Typical Rise Time (ns): 50 Typical Turn-Off Delay Time (ns): 13 Typical Turn-On Delay Time (ns): 10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Supplier Package: TO-220AB Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 9.01(Max) Package Length: 10.41(Max) Package Width: 4.7(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole