INTERNATIONAL RECTIFIER . IRFR9N20DPBF
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Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Radwell | IRFR9N20DPBF | 975 | 975 | ||
| 1Source | IRFR9N20DPBF | 1 | 1 | ||
| swatee.com | IRFR9N20DPBF | 1 | 309 | 1 | 1 @ $2.22 |
| Hotenda | H1830215 | 1 | 1 |
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MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC
Catalog
| Category | Industrial & Scientific |
|---|---|
| MPN | IRFR9N20DPBF |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 9.4 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 86 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR9N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 9.4 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 86 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR9N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 9.4 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 86 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR9N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 9.4 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 86 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR9N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 200V 1 N-CH HEXFET 380mOhms 18nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 200 V Vgs - Gate-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 9.4 A Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Qg - Gate Charge: 18 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 86 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR9N20DPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |