Vishay N Channel Mosfet, 500V, 5A, D-Pak - IRFR430APBF

N CHANNEL MOSFET, 500V, 5A, D-PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; On Resistance Rds(on):1.7ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

VISHAY SILICONIX IRFR430APBF N CHANNEL MOSFET, 500V, 5A, D-PAK

N CHANNEL MOSFET, 500V, 5A, D-PAK; Transistor Polarity:N Channel; Drain Source Voltage Vds:500V; Continuous Drain Current Id:5A; On Resistance Rds(on):1.7ohm; Transistor Mounting:Surface Mount; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

500V 5A 1.7 Ohm N-ch DPAK ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 500 Maximum Gate Source Voltage (V): ±30 Maximum Gate Threshold Voltage (V): 4.5 Maximum Continuous Drain Current (A): 5 Maximum Gate Source Leakage Current (nA): 100 Maximum IDSS (uA): 25 Maximum Drain Source Resistance (mOhm): 1700@10V Typical Gate Charge @ Vgs (nC): 24(Max)@10V Typical Gate Charge @ 10V (nC): 24(Max) Typical Input Capacitance @ Vds (pF): 750@1V Maximum Power Dissipation (mW): 110000 Typical Fall Time (ns): 16 Typical Rise Time (ns): 27 Typical Turn-Off Delay Time (ns): 17 Typical Turn-On Delay Time (ns): 8.7 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: DPAK Pin Count: 3 Standard Package Name: TO-252 Mounting: Surface Mount Package Height: 2.39(Max) Package Length: 6.73(Max) Package Width: 6.22(Max) PCB changed: 2 Tab: Tab