international-rectifier . IRFR4105TRPBF
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 31K2005 | 1 | 1 | ||
 Radwell | IRFR4105TRPBF | 2000 | 2000 | ||
| 1Source | IRFR4105TRPBF | 1 | 1 | ||
 swatee.com | IRFR4105TRPBF | 1 | 860 | 1 | 1 @ $2.23 |
| Hotenda | H1809279 | 1 | 30586 | 1 | 1 @ $0.98, 10 @ $0.88, 100 @ $0.68, 500 @ $0.57 |
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MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC (10 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 45 mOhms Configuration: Single Qg - Gate Charge: 22.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 48 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4105TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC (100 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 45 mOhms Configuration: Single Qg - Gate Charge: 22.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 48 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4105TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC (5 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 45 mOhms Configuration: Single Qg - Gate Charge: 22.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 48 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4105TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC (50 pieces)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 45 mOhms Configuration: Single Qg - Gate Charge: 22.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 48 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4105TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |
MOSFET 55V 1 N-CH HEXFET 45mOhms 22.7nC (1 piece)
Brand: International Rectifier
Catalog
| Feature | Manufacturer: International Rectifier Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 25 A Rds On - Drain-Source Resistance: 45 mOhms Configuration: Single Qg - Gate Charge: 22.7 nC Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 48 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | IRFR4105TRPBF |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | International Rectifier |