VISHAY . IRFR010PBF

EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Obsolete HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 50 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 8.2 Maximum Drain Source Resistance (mOhm): 200@10V Typical Gate Charge @ Vgs (nC): 6.7@10V Typical Gate Charge @ 10V (nC): 6.7 Typical Gate to Drain Charge (nC): 3.2 Typical Gate to Source Charge (nC): 1.8 Typical Reverse Recovery Charge (nC): 330 Typical Input Capacitance @ Vds (pF): 250@25V Typical Output Capacitance (pF): 150 Maximum Power Dissipation (mW): 25000 Typical Fall Time (ns): 23 Typical Rise Time (ns): 33 Typical Turn-Off Delay Time (ns): 12 Typical Turn-On Delay Time (ns): 11 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Supplier Package: DPAK Pin Count: 3 Standard Package Name: TO-252 Mounting: Surface Mount Package Height: 2.39(Max) Package Length: 6.73(Max) Package Width: 6.22(Max) PCB changed: 2 Tab: Tab