Vishay N Channel Mosfet, 600V, 320Ma, Hd-1 - IRFDC20PBF

N CHANNEL MOSFET, 600V, 320mA, HD-1; Transistor Polarity:N Channel; Drain Source Voltage Vds:600V; Continuous Drain Current Id:320mA; On Resistance Rds(on):4.4ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V RoHS Compliant: Yes

Single N-Channel 600 V 4.4 Ohms Through Hole Power Mosfet - HVMDIP ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Dual Drain Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 20|-20 Maximum Continuous Drain Current (A): 0.32 Maximum Drain Source Resistance (mOhm): 4400@10V Typical Gate Charge @ Vgs (nC): 18(Max)@10V Typical Gate Charge @ 10V (nC): 18(Max) Typical Input Capacitance @ Vds (pF): 350@25V Maximum Power Dissipation (mW): 1000 Typical Fall Time (ns): 25 Typical Rise Time (ns): 23 Typical Turn-Off Delay Time (ns): 30 Typical Turn-On Delay Time (ns): 10 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tube� Maximum Continuous Drain Current on PCB @ TC=25°C (A): 320m (Ta) Typical Gate Threshold Voltage (V): 10 Supplier Package: HVMDIP Pin Count: 4 Standard Package Name: DIP Mounting: Through Hole Package Height: 3.37(Max) Package Length: 5(Max) Package Width: 6.29(Max) PCB changed: 4 Lead Shape: Through Hole