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VISHAY . IRFBC40STRLPBF

Attributes

Brand name, Manufacturer nameVISHAY
ManufacturerVISHAY SILICONIX (VISHAY) Vishay
extendedQty, qtyInStock0
moq, multiple, Item_package_quantity, PackageQuantity1
MPN, Part Number, Model, Keyword, ModelNumber, Model_number, PartNumber, Part_numberIRFBC40STRLPBF
qtySourceupdateFromUrlEntry
Product Group, ProductTypeNameBISS
ASINB0748MFR8B
AdultProduct, Autographed, Batteries_required, Memorabilia, TradeInEligibleFalse
AsinB0748MFR8B B09T5ZJVK7
BrandSILICONIX (VISHAY) Vishay
Bullet_pointChannelType: N-Channel Drain-sourceOnResistance-Max: 1.2 Ω QgGateCharge: 60 nC RatedPowerDissipation(P): 130 W VoltageDraintoSource: 600 V
Case, NumberOfItems800
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161
ClassificationId306506011 306919011
DisplayNameIndustrial Electrical MOSFET
Externally_assigned_product_identifier, Identifier6098000411401
FeatureChannelType: N-Channel
FetchTime1625734586 1651494678 1668508987 1687700246 1704887308 1714700035
Height150 243 56 75
IdentifierTypeEAN
ItemClassificationBASE_PRODUCT
ItemName, Item_nameSILICONIX (VISHAY) IRFBC40STRLPBF Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 - 800 item(s) Vishay IRFBC40STRLPBF, Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R (25 Items)
Item_type_keywordelectronic-components mosfet-transistors
Item_weight2.53
Label, Man, Publisher, StudioSILICONIX (VISHAY)
Linkhttps://m.media-amazon.com/images/I/11AjHi1k7PL._SL75_.jpg https://m.media-amazon.com/images/I/11AjHi1k7PL.jpg https://m.media-amazon.com/images/I/218E+YhkL4L._SL75_.jpg https://m.media-amazon.com/images/I/218E+YhkL4L.jpg
Marketplace_idATVPDKIKX0DER
MaterialVishay
Number_of_items25 800
ProductGroupBISS BISS Basic
ProductTypeBISS ELECTRONIC_COMPONENT
Product_descriptionEU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 6.2 Maximum Drain Source Resistance (mOhm): 1200@10V Typical Gate Charge @ Vgs (nC): 60(Max)@10V Typical Gate Charge @ 10V (nC): 60(Max) Typical Input Capacitance @ Vds (pF): 1300@25V Maximum Power Dissipation (mW): 3100 Typical Fall Time (ns): 20 Typical Rise Time (ns): 18 Typical Turn-Off Delay Time (ns): 55 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Product_site_launch_date2017-07-26T16:02:38.719Z 2022-02-15T19:38:05.853Z
TitleSILICONIX (VISHAY) IRFBC40STRLPBF Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 - 800 item(s)
Typeean
URLhttps://m.media-amazon.com/images/I/218E+YhkL4L._SL75_.jpg
Unitgrams pounds
Unitspixels pounds
VariantMAIN
WebsiteDisplayGroupbiss_basic_display_on_website
WebsiteDisplayGroupNameBISS Basic
Weight0.0055776952286
Width150 323 75

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Newark41K215811
GalcoIRFBC40STRLPBF-VISH8008001 @ $2.16
Digi-Key2621922111 @ $5.34, 10 @ $4.80, 100 @ $3.93, 800 @ $3.34
1SourceIRFBC40STRLPBF11
RadwellIRFBC40STRLPBF8008001 @ $3.59
Win SourceIRFBC40STRLPBF136401
HotendaH1814228800800800800 @ $2.65
Future Electronics3953593800800800 @ $1.96

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SILICONIX (VISHAY) IRFBC40STRLPBF Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 - 800 item(s)
Brand: SILICONIX (VISHAY)
Single N-Channel 600 V 1.2 Ohms Surface Mount Power Mosfet - D2PAK-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
  • ChannelType: N-Channel
  • VoltageDraintoSource: 600 V
  • Drain-sourceOnResistance-Max: 1.2 Ω
  • QgGateCharge: 60 nC
  • RatedPowerDissipation(P): 130 W
Listing
Product groupBISS Basic
Product typeBISS
ModelIRFBC40STRLPBF
Part numberIRFBC40STRLPBF
Items per pack800
LabelSILICONIX (VISHAY)
ManufacturerSILICONIX (VISHAY)
Catalog
FeatureChannelType: N-Channel
CategoryIndustrial & Scientific
MPNIRFBC40STRLPBF
Product groupBISS
Product typeBISS
ManufacturerSILICONIX (VISHAY)
View on Amazon (paid link)
Vishay IRFBC40STRLPBF, Trans MOSFET N-CH 600V 6.2A 3-Pin(2+Tab) D2PAK T/R (25 Items)
Brand: Vishay
EU RoHS: Compliant with Exemption ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Channel Mode: Enhancement Channel Type: N Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 600 Maximum Gate Source Voltage (V): ±20 Maximum Continuous Drain Current (A): 6.2 Maximum Drain Source Resistance (mOhm): 1200@10V Typical Gate Charge @ Vgs (nC): 60(Max)@10V Typical Gate Charge @ 10V (nC): 60(Max) Typical Input Capacitance @ Vds (pF): 1300@25V Maximum Power Dissipation (mW): 3100 Typical Fall Time (ns): 20 Typical Rise Time (ns): 18 Typical Turn-Off Delay Time (ns): 55 Typical Turn-On Delay Time (ns): 13 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 150 Packaging: Tape and Reel Supplier Package: D2PAK Pin Count: 3 Standard Package Name: TO-263 Mounting: Surface Mount Package Height: 4.83(Max) Package Length: 10.41(Max) Package Width: 9.65(Max) PCB changed: 2 Tab: Tab
View on Amazon (paid link)