Vishay P Channel Mosfet, -60V, 6.7A - IRF9Z10PBF

P CHANNEL MOSFET, -60V, 6.7A; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6.7A; On Resistance Rds(on):0.5ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

VISHAY SILICONIX IRF9Z10PBF P CHANNEL MOSFET, -60V, 6.7A

P CHANNEL MOSFET, -60V, 6.7A; Transistor Polarity:P Channel; Drain Source Voltage Vds:60V; Continuous Drain Current Id:6.7A; On Resistance Rds(on):0.5ohm; Transistor Mounting:Through Hole; Rds(on) Test Voltage Vgs:10V; MSL:- RoHS Compliant: Yes

EU RoHS: Compliant ECCN (US): EAR99 Part Status: Active HTS: 8541.29.00.95 Automotive: No PPAP: No Product Category: Power MOSFET Configuration: Single Process Technology: TrenchFET Channel Mode: Enhancement Channel Type: P Number of Elements per Chip: 1 Maximum Drain Source Voltage (V): 60 Maximum Gate Source Voltage (V): ±20 Maximum Gate Threshold Voltage (V): 4 Maximum Continuous Drain Current (A): 6.7 Maximum Drain Source Resistance (mOhm): 500@10V Typical Gate Charge @ Vgs (nC): 12(Max)@10V Typical Gate Charge @ 10V (nC): 12(Max) Typical Gate to Drain Charge (nC): 5.1(Max) Typical Gate to Source Charge (nC): 3.8(Max) Typical Reverse Recovery Charge (nC): 96 Typical Input Capacitance @ Vds (pF): 270@25V Typical Output Capacitance (pF): 170 Maximum Power Dissipation (mW): 43000 Typical Fall Time (ns): 31 Typical Rise Time (ns): 63 Typical Turn-Off Delay Time (ns): 10 Typical Turn-On Delay Time (ns): 11 Minimum Operating Temperature (°C): -55 Maximum Operating Temperature (°C): 175 Supplier Package: TO-220AB Pin Count: 3 Standard Package Name: TO-220 Mounting: Through Hole Package Height: 9.01(Max) Package Length: 10.41(Max) Package Width: 4.7(Max) PCB changed: 3 Tab: Tab Lead Shape: Through Hole