IPW50R399CP Transistor - CASE: TO247 MAKE: Infineon - Siemens
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Little Diode | IPW50R399CP | 1 | 1 | ||
| Win Source | IPW50R399CP | 1 | 5999 | 1 | |
| Hotenda | H1832832 | 1 | 1 | ||
| 1Source | IPW50R399CP | 1 | 1 |
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MOSFET COOL MOS PWR TRANS 560V 0.399 Ohms (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 399 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 83 W Mounting Style: Through Hole Package / Case: TO-247-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPW50R399CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS PWR TRANS 560V 0.399 Ohms (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 399 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 83 W Mounting Style: Through Hole Package / Case: TO-247-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPW50R399CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS PWR TRANS 560V 0.399 Ohms (50 pieces)
Brand: Infineon Technologies
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IPW50R399CP |
| Label | Infineon Technologies |
| Manufacturer | Infineon Technologies |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 399 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 83 W Mounting Style: Through Hole Package / Case: TO-247-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPW50R399CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS PWR TRANS 560V 0.399 Ohms (1 piece)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 500 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 399 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 83 W Mounting Style: Through Hole Package / Case: TO-247-3 |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPW50R399CP |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |