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IPP80N06S2-08 INFINEON Transistors - Jotrin Electronics

Infineon Technologies Corporation . IPP80N06S2-08

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Attributes

Brand name, Manufacturer nameInfineon Technologies Corporation
ManufacturerInfineon Technologies Corporation Infineon Technologies
Attribute00, Attribute08TO-262
Attribute01MOSFET
Attribute02Rohs
Attribute032N0608
Attribute04, qtyInStock58000
Attribute05Single
Attribute06+ 175 C
Attribute07Through Hole
Attribute09Tube
Attribute1014 ns
Attribute11- 55 C
Attribute12215 W
Attribute1315 ns
Attribute1432 ns
Attribute15IPP80N06S208AKSA1 IPP80N06S208XK SP000218826
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03Marking Code
AttributeKey04In-stock
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Mounting Style
AttributeKey08Package / Case
AttributeKey09Packaging
AttributeKey10Fall Time
AttributeKey11Minimum Operating Temperature
AttributeKey12Power Dissipation
AttributeKey13Rise Time
AttributeKey14Typical Turn Off Delay Time
AttributeKey15Part # Aliases
Extra Product NameIPP80N06S2-08 INFINEON Transistors - Jotrin Electronics
keywordsIPP80N06S2-08,INFINEON,TO-262,MOSFET,,Marking Code 2N0608IPP80N06S2-08 Datasheet PDF
moq, multiple1
MPN, Part Number, PartNumberIPP80N06S2-08
SKUJT25-IPP80N06S2-08
snippetBuy IPP80N06S2-08 INFINEON ,Marking Code: 2N0608, Learn more about IPP80N06S2-08 MOSFET OptiMOS PWR TRANST 55V 80A, View the manufacturer, and stock, and datasheet pdf for the IPP80N06S2-08 at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00HKSDKN4 B00LWOVCJ6 B00LWOVFD4 B00LWOVILS B00LWOVMKA
Brand, Label, Man, Publisher, StudioInfineon Technologies
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 726-IPP80N06S208 X1 MS 726-IPP80N06S208 X10 MS 726-IPP80N06S208 X100 MS 726-IPP80N06S208 X5 MS 726-IPP80N06S208 X50
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 8 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 215 W Mounting Style: Through Hole Package / Case: I2PAK-3
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET OptiMOS PWR TRANST 55V 80A (1 piece) MOSFET OptiMOS PWR TRANST 55V 80A (10 pieces) MOSFET OptiMOS PWR TRANST 55V 80A (100 pieces) MOSFET OptiMOS PWR TRANST 55V 80A (5 pieces) MOSFET OptiMOS PWR TRANST 55V 80A (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-IPP80N06S2-081580001
4 Star ElectronicsIPP80N06S20811
Win SourceIPP80N06S2-081325001
1SourceIPP80N06S2-0811
iodPartsIPP80N06S2-0811

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MOSFET OptiMOS PWR TRANST 55V 80A (1 piece)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 8 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 215 W Mounting Style: Through Hole Package / Case: I2PAK-3
CategoryIndustrial & Scientific
MPNIPP80N06S2-08
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS PWR TRANST 55V 80A (10 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 8 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 215 W Mounting Style: Through Hole Package / Case: I2PAK-3
CategoryIndustrial & Scientific
MPNIPP80N06S2-08
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS PWR TRANST 55V 80A (100 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 8 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 215 W Mounting Style: Through Hole Package / Case: I2PAK-3
CategoryIndustrial & Scientific
MPNIPP80N06S2-08
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS PWR TRANST 55V 80A (5 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 8 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 215 W Mounting Style: Through Hole Package / Case: I2PAK-3
CategoryIndustrial & Scientific
MPNIPP80N06S2-08
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)
MOSFET OptiMOS PWR TRANST 55V 80A (50 pieces)
Brand: Infineon Technologies
Catalog
FeatureManufacturer: Infineon Product Category: MOSFETs RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 55 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 80 A Rds On - Drain-Source Resistance: 8 mOhms Configuration: Single Maximum Operating Temperature: + 175 C Pd - Power Dissipation: 215 W Mounting Style: Through Hole Package / Case: I2PAK-3
CategoryIndustrial & Scientific
MPNIPP80N06S2-08
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerInfineon Technologies
View on Amazon (paid link)