Infineon Mosfet Transistor, N Channel, 18.5 A, 500 V, 0.17 Ohm, 13 V, 3 V Rohs Compliant: Yes - IPP50R190CEXKSA1
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Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 50Y2065 | 1 | 1147 | 1 | 1 @ $2.12, 10 @ $1.77, 100 @ $1.40, 500 @ $1.18, 1000 @ $1.01, 2500 @ $0.96, 5000 @ $0.92 |
 TME | IPP50R190CEXKSA1 | 1 | 379 | 1 | 1 @ $2.55, 3 @ $2.29, 10 @ $2.02, 50 @ $1.82, 250 @ $1.70 |
| Digi-Key | 4214663 | 1 | 1 | 1 @ $2.84, 10 @ $2.55, 100 @ $2.05, 500 @ $1.68, 1000 @ $1.40, 2000 @ $1.30, 5000 @ $1.25 | |
| RS Delivers | 914-0227P | 1 | 1 | 1 @ $2.53 | |
| Digi-Key | 15641431 | 1 | 1 | ||
| IPP50R190CEXKSA1 | 1 | 243 | 1 | 1 @ $1.04, 10 @ $0.97, 100 @ $0.90, 1000 @ $0.77, 10000 @ $0.77 | |
| AmazonSC | B0731PCT36 | 1 | 1 | ||
 swatee.com | IPP50R190CEXKSA1 | 1 | 332 | 1 | 1 @ $6.09 |
| 1Source | IPP50R190CEXKSA1 | 1 | 1 | ||
| Future Electronics | 7082922 | 500 | 500 | 500 @ $0.90, 1000 @ $0.86 |
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MOSFET COOL MOS (10 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 47.2 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP50R190CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (5 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 47.2 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP50R190CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS (50 pieces)
Brand: Infineon Technologies
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 47.2 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP50R190CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
MOSFET COOL MOS
Brand: Infineon Technologies
Listing
| Product group | BISS Basic |
|---|---|
| Product type | ELECTRONIC_COMPONENT |
| Part number | IPP50R190CEXKSA1 |
| Label | Infineon Technologies |
| Manufacturer | Infineon Technologies |
Catalog
| Feature | Manufacturer: Infineon Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 550 V Vgs - Gate-Source Breakdown Voltage: 20 V Id - Continuous Drain Current: 18.5 A Rds On - Drain-Source Resistance: 190 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 3 V Qg - Gate Charge: 47.2 nC Maximum Operating Temperature: + 150 C |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP50R190CEXKSA1 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Infineon Technologies |
INFINEON IPP50R190CEXKSA1 Single N-Channel 500 V 0.19 Ohm 47.2 nC CoolMOS Power Mosfet - TO-220-3 - 500 item(s)
Brand: Infineon
Single N-Channel 500 V 0.19 Ohm 47.2 nC CoolMOS Power Mosfet - TO-220-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Ch
- Noofchannels: 1
- VoltageDraintoSource: 500 V
- Drain-sourceOnResistance-Max: 190 mΩ
- RatedPowerDissipation(P): 152 WQgGateCharge: 47.2 nC; GateSourceVoltageMax: 20 V; DrainCurrent-Max(ID): 24.8 A; Turn-onTime-Nom(ton): 9.5 ns; Turn-offTime-Nom(toff): 54 ns; RiseTIme: 8.5 ns; FallTime: 7.5 ns; OperatingTempRange: -55 to +15
Listing
| Product group | BISS |
|---|---|
| Product type | BISS |
| Model | IPP50R190CEXKSA1 |
| Part number | IPP50R190CEXKSA1 |
| Items per pack | 500 |
| Label | INFINEON |
| Manufacturer | INFINEON |
Catalog
| Feature | ChannelType: N-Ch |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP50R190CEXKSA1 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | INFINEON |
Mosfet Cool Mos
Brand: Infineon
Listing
| Product group | BISS |
|---|---|
| Product type | LAB_SUPPLY |
| Part number | IPP50R190CEXKSA1 |
| Items per pack | 50 |
| Label | Infineon |
| Manufacturer | Infineon |
Catalog
| Feature | Mos |
|---|---|
| Category | Industrial & Scientific |
| MPN | IPP50R190CEXKSA1 |
| Product group | BISS |
| Product type | LAB_SUPPLY |
| Manufacturer | Infineon |