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IPD068N10N3 G INFINEON Transistors - Jotrin Electronics

Infineon Technologies Corporation . IPD068N10N3 G

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Attributes

Brand name, Manufacturer name, ManufacturerInfineon Technologies Corporation
Attribute00, Attribute07TO-252
Attribute01MOSFET
Attribute02Green
Attribute03, qtyInStock100000
Attribute046.8 mOhms
Attribute05Single
Attribute06+ 175 C
Attribute08Reel
Attribute09- 55 C
Attribute10150000 mW
Attribute112500
Attribute1237 ns
Attribute13IPD068N10N3GBTMA1 IPD068N10N3GXT SP000469892
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03In-stock
AttributeKey04Resistance Drain Source RDS (on)
AttributeKey05Configuration
AttributeKey06Maximum Operating Temperature
AttributeKey07Package / Case
AttributeKey08Packaging
AttributeKey09Minimum Operating Temperature
AttributeKey10Power Dissipation
AttributeKey11Factory Pack Quantity
AttributeKey12Typical Turn Off Delay Time
AttributeKey13Part # Aliases
Extra Product NameIPD068N10N3 G INFINEON Transistors - Jotrin Electronics
keywordsIPD068N10N3 G,INFINEON,TO-252,MOSFET,IPD068N10N3 G Datasheet PDF
moq, multiple1
MPNIPD068N10N3 G
SKUJT25-IPD068N10N3 G
snippetBuy IPD068N10N3 G INFINEON , Learn more about IPD068N10N3 G N-Channel MOSFETs (20V…250V); Package: PG-TO252-3; Package: DPAK (TO-252); VDS (max): 100.0 V; RDS (on) (max) (@10V): 6.8 mOhm; RDS (on) (max) (@4.5V): -; ID (max): 90.0 A;, View the manufacturer, and stock, and datasheet pdf for the IPD068N10N3 G at Jotrin Electronics.

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jotrin.comJT25-IPD068N10N3 G11000001
Little DiodeIPD068N10N3G11
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