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Fairchild Semiconductor . FDP085N10A_F102

Fairchild Semiconductor . FDP085N10A_F102

Gallery

Attributes

Brand name, Manufacturer name, Manufacturer, Attribute03, Brand, Label, Man, Publisher, StudioFairchild Semiconductor
Attribute00+175 °C
Attribute01, moq, multiple, Case, PackageQuantity1
Attribute0210.36mm
Attribute0496 A
Attribute05TO-220
Attribute06188 W
Attribute07Through Hole
Attribute08-55 °C
Attribute094.672mm
Attribute1015.215mm
Attribute118.5 m?
Attribute12100 V
Attribute133
Attribute1431 nC @ 10 V
Attribute15, AttributeKey15Channel Mode
Attribute16, AttributeKey16Channel Type
Attribute17, AttributeKey17Maximum Gate Source Voltage
Attribute18, AttributeKey18Stock
AttributeKey00Maximum Operating Temperature
AttributeKey01Number of Elements per Chip
AttributeKey02Length
AttributeKey03Brand
AttributeKey04Maximum Continuous Drain Current
AttributeKey05Package Type
AttributeKey06Maximum Power Dissipation
AttributeKey07Mounting Type
AttributeKey08Minimum Operating Temperature
AttributeKey09Width
AttributeKey10Height
AttributeKey11Maximum Drain Source Resistance
AttributeKey12Maximum Drain Source Voltage
AttributeKey13Pin Count
AttributeKey14Typical Gate Charge @ Vgs
jsonUrlData7605930
MPN, Part Number, PartNumberFDP085N10A_F102
SKU760-5930
Product Group, ProductGroupBISS
ASINB00M0CNMOC
AsinB00M0CNMOC B00MEKI1HI
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 512-FDP085N10A_F102
Feature<b>Manufacturer</b>: Fairchild Semiconductor <b>RoHS</b>: <b>Transistor Polarity</b>: N-Channel <b>Drain-Source Breakdown Voltage</b>: 100 V <b>Gate-Source Breakdown Voltage</b>: 20 V <b>Continuous Drain Current</b>: 96 A <b>Drain-Source On Resistance</b>: 7.35 mOhms <b>Configuration</b>: Single <b>Mounting Style</b>: Through Hole <b>Package / Case</b>: TO-220 <b>Packaging</b>: Tube <b>Fall Time</b>: 8 ns <b>Forward Transconductance - Min</b>: 72 S <b>Gate Charge Qg</b>: 31 nC Manufacturer: Fairchild Semiconductor RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 96 A Drain-Source On Resistance: 7.35 mOhms Configuration: Single Mounting Style: Through Hole Package / Case: TO-220 Packaging: Tube Fall Time: 8 ns Forward Transconductance - Min: 72 S Gate Charge Qg: 31 nC
FetchTime1541862428
Height75
ProductTypeNameELECTRONIC_COMPONENT TRANSISTOR
TitleMOSFET 100V N-CHANNEL POWERTRENCH MOSFET
URLhttp://ecx.images-amazon.com/images/I/31xWYlm4QZL._SL75_.jpg
Unitspixels
Width31

Distributor offers

SellerSKUMOQIn stockMultiplePrices
RS Delivers760-593011
RadwellFDP085N10A_F1028008001 @ $2.71
Win SourceFDP085N10A_F102111
HotendaH18250621244011 @ $2.89, 10 @ $2.60, 100 @ $2.09, 500 @ $1.72
1SourceFDP085N10A_F10211
Digi-KeyFDP085N10A_F102-ND1501 @ $1.78, 10 @ $1.60, 100 @ $1.29, 500 @ $1.06, 1000 @ $0.88

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MOSFET 100V N-CHANNEL POWERTRENCH MOSFET
Brand: Fairchild Semiconductor
Listing
Product groupBISS
Product typeTRANSISTOR
Part numberFDP085N10A_F102
LabelFairchild Semiconductor
ManufacturerFairchild Semiconductor
Catalog
Feature<b>Manufacturer</b>: Fairchild Semiconductor <b>RoHS</b>: <b>Transistor Polarity</b>: N-Channel <b>Drain-Source Breakdown Voltage</b>: 100 V <b>Gate-Source Breakdown Voltage</b>: 20 V <b>Continuous Drain Current</b>: 96 A <b>Drain-Source On Resistance</b>: 7.35 mOhms <b>Configuration</b>: Single <b>Mounting Style</b>: Through Hole <b>Package / Case</b>: TO-220 <b>Packaging</b>: Tube <b>Fall Time</b>: 8 ns <b>Forward Transconductance - Min</b>: 72 S <b>Gate Charge Qg</b>: 31 nC
CategoryIndustrial & Scientific
MPNFDP085N10A_F102
Product groupBISS
Product typeTRANSISTOR
ManufacturerFairchild Semiconductor
View on Amazon (paid link)
MOSFET 100V N-CHANNEL POWERTRENCH MOSFET
Brand: Fairchild Semiconductor
Catalog
FeatureManufacturer: Fairchild Semiconductor RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 100 V Gate-Source Breakdown Voltage: 20 V Continuous Drain Current: 96 A Drain-Source On Resistance: 7.35 mOhms Configuration: Single Mounting Style: Through Hole Package / Case: TO-220 Packaging: Tube Fall Time: 8 ns Forward Transconductance - Min: 72 S Gate Charge Qg: 31 nC
CategoryIndustrial & Scientific
MPNFDP085N10A_F102
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerFairchild Semiconductor
View on Amazon (paid link)