ONSEMI . FCB20N60TM
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 88T3229 | 1 | 1 | ||
| FCB20N60TM | 1 | 1 | |||
| RS Delivers | 671-0330P | 1 | 174 | 1 | 1 @ $5.28, 25 @ $3.00, 100 @ $2.88, 250 @ $2.80, 500 @ $2.74 |
| 1Source | FCB20N60TM | 1 | 1 | ||
| Digi-Key | 820899 | 1 | 1 | 1 @ $5.65, 10 @ $5.07, 100 @ $4.16, 800 @ $3.54, 1600 @ $2.99 | |
| 166-1748 | 800 | 800 | 800 @ $1.82 | ||
| Win Source | FCB20N60TM | 20 | 1 | 20 | 20 @ $2.54, 55 @ $1.90, 180 @ $1.71 |
| Hotenda | H1814270 | 800 | 800 | 800 | 800 @ $2.94 |
| Future Electronics | 2281061 | 800 | 800 | 800 @ $2.40 | |
![]() Radwell | FCB20N60TM | 800 | -2 | 800 | 1 @ $3.92 |
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MOSFET HIGH_POWER (1 piece)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Continuous Drain Current: 20 A Drain-Source On Resistance: 190 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D2PAK Packaging: Reel Fall Time: 65 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCB20N60TM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET HIGH_POWER (10 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Continuous Drain Current: 20 A Drain-Source On Resistance: 190 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D2PAK Packaging: Reel Fall Time: 65 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCB20N60TM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET HIGH_POWER (100 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Continuous Drain Current: 20 A Drain-Source On Resistance: 190 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D2PAK Packaging: Reel Fall Time: 65 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCB20N60TM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET HIGH_POWER (5 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Continuous Drain Current: 20 A Drain-Source On Resistance: 190 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D2PAK Packaging: Reel Fall Time: 65 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCB20N60TM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET HIGH_POWER (50 pieces)
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Continuous Drain Current: 20 A Drain-Source On Resistance: 190 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D2PAK Packaging: Reel Fall Time: 65 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCB20N60TM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
MOSFET HIGH_POWER
Brand: Fairchild Semiconductor
Catalog
| Feature | Manufacturer: Fairchild Semiconductor Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Drain-Source Breakdown Voltage: 600 V Gate-Source Breakdown Voltage: +/- 30 V Continuous Drain Current: 20 A Drain-Source On Resistance: 190 mOhms Configuration: Single Maximum Operating Temperature: + 150 C Mounting Style: SMD/SMT Package / Case: D2PAK Packaging: Reel Fall Time: 65 ns |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCB20N60TM |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | Fairchild Semiconductor |
FAIRCHILD (ON SEMICONDUCTOR) FCB20N60TM N-Channel 600 V 0.19 Ohm Surface Mount SuperFET FRFET Mosfet - D2PAK-3 - 800 item(s)
Brand: FAIRCHILD (ON SEMICONDUCTOR)
N-Channel 600 V 0.19 Ohm Surface Mount SuperFET FRFET Mosfet - D2PAK-3 ***** For more information refer to the specification sheet located in the 'Downloads' section below the image *****
Details
- ChannelType: N-Channel
- VoltageDraintoSource: 600 V
- Drain-sourceOnResistance-Max: 0.19 Ω
- QgGateCharge: 75 nC
- RatedPowerDissipation(P): 208 W
Listing
| Product group | BISS |
|---|---|
| Product type | BISS |
| Model | FCB20N60TM |
| Part number | FCB20N60TM |
| Items per pack | 800 |
| Label | FAIRCHILD (ON SEMICONDUCTOR) |
| Manufacturer | FAIRCHILD (ON SEMICONDUCTOR) |
Catalog
| Feature | ChannelType: N-Channel |
|---|---|
| Category | Industrial & Scientific |
| MPN | FCB20N60TM |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | FAIRCHILD (ON SEMICONDUCTOR) |
