NEXPERIA . BSP100,135
Attributes
Distributor offers
| Seller | SKU | MOQ | In stock | Multiple | Prices |
|---|---|---|---|---|---|
| Newark | 79R1838 | 1 | 1 | ||
| 1Source | BSP100,135 | 1 | 1 | ||
| Digi-Key | 15645743 | 1 | 1 | 1603 @ $0.19 | |
| Digi-Key | 11538141 | 1 | 1 | 1316 @ $0.19 | |
| Digi-Key | 2697704 | 1 | 1 | ||
| iodParts | BSP100,135 | 4000 | 32000 | 4000 | 4000 @ $0.15, 8000 @ $0.15, 12000 @ $0.14, 20000 @ $0.14 |
| Hotenda | H1813100 | 1 | 1 |
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NXP BSP100,135 MOSFET, N CH, 30V, 6A, 4-SOT-223
Brand: NXP
Catalog
| Feature | <b>Price For:</b> Each\xa01 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP |
MOSFET TAPE13 MOSFET (10 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.2 A Rds On - Drain-Source Resistance: 100 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8.3 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 MOSFET (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.2 A Rds On - Drain-Source Resistance: 100 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8.3 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 MOSFET (1000 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | <b>Pack of:</b> 1000 |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 MOSFET (5 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.2 A Rds On - Drain-Source Resistance: 100 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8.3 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 MOSFET (50 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.2 A Rds On - Drain-Source Resistance: 100 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8.3 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 MOSFET (500 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.2 A Rds On - Drain-Source Resistance: 100 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8.3 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET TAPE13 MOSFET (1 piece)
Brand: NXP Semiconductors
Catalog
| Feature | Manufacturer: NXP Product Category: MOSFETs - Arrays RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Vgs - Gate-Source Breakdown Voltage: +/- 20 V Id - Continuous Drain Current: 3.2 A Rds On - Drain-Source Resistance: 100 mOhms Configuration: Single Dual Drain Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 8.3 W Mounting Style: SMD/SMT |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | ELECTRONIC_COMPONENT |
| Manufacturer | NXP Semiconductors |
MOSFET N-CH 30V 3.2A SOT223 (100 pieces)
Brand: NXP Semiconductors
Catalog
| Feature | u"<b>Minimum Quantity:</b> 1 <b>Packaging:</b> Cut Tape (CT) <b>Series:</b> TrenchMOS\xc3\xa2\xe2\u20ac\u017e\xc2\xa2 <b>FET Type:</b> MOSFET N-Channel, Metal Oxide <b>FET Feature:</b> Logic Level Gate <b>Drain to Source Voltage (Vdss):</b> 30V <b>Current - Continuous Drain (Id) @ 25\xc3'\xc2\xb0C:</b> 3.2A (Ta) <b>Rds On (Max) @ Id, Vgs:</b> 100 mOhm @ 2.2A, 10V <b>Vgs(th) (Max) @ Id:</b> 2.8V @ 1mA <b>Gate Charge (Qg) @ Vgs:</b> 6nC @ 10V <b>Input Capacitance (Ciss) @ Vds:</b> 250pF @ 20V <b>Power - Max:</b> 8.3W" |
|---|---|
| Category | Industrial & Scientific |
| MPN | BSP100,135 |
| Product group | BISS |
| Product type | BISS |
| Manufacturer | NXP Semiconductors |