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SIB488DK-T1-GE3 VISHAY SILICONIX Transistors - Jotrin Electronics

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Attributes

Brand name, Manufacturer nameVishay Siliconix Components
ManufacturerVishay Siliconix Components Vishay / Siliconix
Attribute00, Attribute07PowerPAK SC-75-6L
Attribute01MOSFET
Attribute02Rohs
Attribute03Obsoleted
Attribute04, qtyInStock3000
Attribute05+ 150 C
Attribute06SMD/SMT
Attribute08Reel
Attribute0932 S
Attribute1013.1 nC
Attribute11- 55 C
Attribute1213 W
Attribute13SIB488DK-GE3
AttributeKey00Package/Case
AttributeKey01Product Categories
AttributeKey02RoHs Status
AttributeKey03Life Cycle
AttributeKey04In-stock
AttributeKey05Maximum Operating Temperature
AttributeKey06Mounting Style
AttributeKey07Package / Case
AttributeKey08Packaging
AttributeKey09Forward Transconductance gFS (Max / Min)
AttributeKey10Gate Charge Qg
AttributeKey11Minimum Operating Temperature
AttributeKey12Power Dissipation
AttributeKey13Part # Aliases
Extra Product NameSIB488DK-T1-GE3 VISHAY SILICONIX Transistors - Jotrin Electronics
keywordsSIB488DK-T1-GE3,VISHAY SILICONIX,PowerPAK SC-75-6L,MOSFET,SIB488DK-T1-GE3 Datasheet PDF
moq, multiple1
MPN, Part Number, PartNumberSIB488DK-T1-GE3
SKUJT25-SIB488DK-T1-GE3
snippetBuy SIB488DK-T1-GE3 VISHAY SILICONIX , Learn more about SIB488DK-T1-GE3 Trans MOSFET N-CH 12V 9A 6-Pin PowerPAK SC-75 T/R, View the manufacturer, and stock, and datasheet pdf for the SIB488DK-T1-GE3 at Jotrin Electronics.
Product Group, ProductGroupBISS
AsinB00LWQGA78 B00LWQGBD6 B00LWQGCSK B00LWQGDY8 B00LWQGEYW B00M2FALQE
Brand, Label, Man, Publisher, StudioVishay / Siliconix
Case, PackageQuantity1 10 100 5 50 500
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 781-SIB488DK-T1-GE3 X1 MS 781-SIB488DK-T1-GE3 X10 MS 781-SIB488DK-T1-GE3 X100 MS 781-SIB488DK-T1-GE3 X5 MS 781-SIB488DK-T1-GE3 X50 MS 781-SIB488DK-T1-GE3 X500
FeatureManufacturer: Vishay Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 16 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.4 V to 1 V Qg - Gate Charge: 13.1 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece 500
TitleMOSFET 12V 9A N-CHANNEL MOSFET (1 piece) MOSFET 12V 9A N-CHANNEL MOSFET (10 pieces) MOSFET 12V 9A N-CHANNEL MOSFET (100 pieces) MOSFET 12V 9A N-CHANNEL MOSFET (5 pieces) MOSFET 12V 9A N-CHANNEL MOSFET (50 pieces) MOSFET 12V 9A N-CHANNEL MOSFET (500 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
jotrin.comJT25-SIB488DK-T1-GE3130001
Digi-Key244210611
swatee.comSIB488DK-T1-GE31290511 @ $0.92
HotendaH181145711

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MOSFET 12V 9A N-CHANNEL MOSFET (10 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 16 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.4 V to 1 V Qg - Gate Charge: 13.1 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIB488DK-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 12V 9A N-CHANNEL MOSFET (100 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 16 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.4 V to 1 V Qg - Gate Charge: 13.1 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIB488DK-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 12V 9A N-CHANNEL MOSFET (5 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 16 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.4 V to 1 V Qg - Gate Charge: 13.1 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIB488DK-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 12V 9A N-CHANNEL MOSFET (50 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 16 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.4 V to 1 V Qg - Gate Charge: 13.1 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIB488DK-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 12V 9A N-CHANNEL MOSFET (500 pieces)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 16 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.4 V to 1 V Qg - Gate Charge: 13.1 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIB488DK-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)
MOSFET 12V 9A N-CHANNEL MOSFET (1 piece)
Brand: Vishay / Siliconix
Catalog
FeatureManufacturer: Vishay Product Category: MOSFET RoHS: Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 12 V Id - Continuous Drain Current: 9 A Rds On - Drain-Source Resistance: 16 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 0.4 V to 1 V Qg - Gate Charge: 13.1 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 13 W Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNSIB488DK-T1-GE3
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerVishay / Siliconix
View on Amazon (paid link)