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PMZB380XN,315 NXP USA Inc. | Discrete Semiconductor Products | DigiKey Marketplace

Attributes

Brand name, Manufacturer name, Attribute01NXP USA Inc.
ManufacturerNXP USA Inc. NXP Semiconductors
Attribute00Discrete Semiconductor Products
Attribute02, Attribute15-
Attribute03, packagingBulk
Attribute04Obsolete
Attribute05N-Channel
Attribute06MOSFET (Metal Oxide)
Attribute0730 V
Attribute08930mA (Ta)
Attribute092.5V, 4.5V
Attribute10460mOhm @ 200mA, 4.5V
Attribute111.5V @ 250?A
Attribute120.87 nC @ 4.5 V
Attribute13?12V
Attribute1456 pF @ 25 V
Attribute16360mW (Ta), 2.7W (Tc)
Attribute17-55?C ~ 150?C (TJ)
Attribute18Surface Mount
Attribute19DFN1006B-3
Attribute20SC-101, SOT-883
AttributeKey00Category
AttributeKey01Mfr
AttributeKey02Series
AttributeKey03Package
AttributeKey04Product Status
AttributeKey05FET Type
AttributeKey06Technology
AttributeKey07Drain to Source Voltage (Vdss)
AttributeKey08Current - Continuous Drain (Id) @ 25?C
AttributeKey09Drive Voltage (Max Rds On, Min Rds On)
AttributeKey10Rds On (Max) @ Id, Vgs
AttributeKey11Vgs(th) (Max) @ Id
AttributeKey12Gate Charge (Qg) (Max) @ Vgs
AttributeKey13Vgs (Max)
AttributeKey14Input Capacitance (Ciss) (Max) @ Vds
AttributeKey15FET Feature
AttributeKey16Power Dissipation (Max)
AttributeKey17Operating Temperature
AttributeKey18Mounting Type
AttributeKey19Supplier Device Package
AttributeKey20Package / Case
Extra Product NamePMZB380XN,315 NXP USA Inc. | Discrete Semiconductor Products | DigiKey Marketplace
atoms, moq, multiple1
extraShipping12.0
MPN, Part Number, PartNumberPMZB380XN,315
qtyInStock243343
SKU11513163
snippetN-Channel 30 V 930mA (Ta) 360mW (Ta), 2.7W (Tc) Surface Mount DFN1006B-3
tierMinQty13,206
tierPrice10.09000
AsinB00HKZLEN0 B00LWP1RP4 B00LWP1Y20 B00LWP2122 B00LWP23X4 B00M2E2R94
Brand, Label, Man, Publisher, StudioNXP Semiconductors
Case, PackageQuantity1 10 100 5 50
CatIndustrial & Scientific
CatId16310091
CatTree16310091 16310161 306506011 306831011 306910011
CatalogNumberListMS 771-PMZB380XN,315 X1 MS 771-PMZB380XN,315 X10 MS 771-PMZB380XN,315 X100 MS 771-PMZB380XN,315 X5 MS 771-PMZB380XN,315 X50
FeatureManufacturer: NXP Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 930 mA Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 0.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2700 mW Mounting Style: SMD/SMT
ProductGroupBISS
ProductTypeNameELECTRONIC_COMPONENT
Size1 Piece 10 Piece 100 Piece 5 Piece 50 Piece
TitleMOSFET 30V Single N-channel Trench MOSFET MOSFET 30V Single N-channel Trench MOSFET (1 piece) MOSFET 30V Single N-channel Trench MOSFET (10 pieces) MOSFET 30V Single N-channel Trench MOSFET (100 pieces) MOSFET 30V Single N-channel Trench MOSFET (5 pieces) MOSFET 30V Single N-channel Trench MOSFET (50 pieces)

Distributor offers

SellerSKUMOQIn stockMultiplePrices
Digi-Key11513163124334313206 @ $0.09
Digi-Key438642311
RadwellPMZB380XN,31510000100001 @ $0.30
HotendaH182953911
Rochester ElectronicsPMZB380XN3151300001 @ $0.13, 25 @ $0.12, 100 @ $0.11, 500 @ $0.11, 1000 @ $0.10
Newark47W76411000010000 @ $0.12, 20000 @ $0.11, 50000 @ $0.10, 100000 @ $0.10, 250000 @ $0.09

Related on Amazon

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MOSFET 30V Single N-channel Trench MOSFET
Catalog
CategoryIndustrial & Scientific
MPNPMZB380XN,315
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET 30V Single N-channel Trench MOSFET (10 pieces)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 930 mA Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 0.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2700 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNPMZB380XN,315
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET 30V Single N-channel Trench MOSFET (100 pieces)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 930 mA Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 0.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2700 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNPMZB380XN,315
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET 30V Single N-channel Trench MOSFET (5 pieces)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 930 mA Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 0.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2700 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNPMZB380XN,315
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET 30V Single N-channel Trench MOSFET (50 pieces)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 930 mA Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 0.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2700 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNPMZB380XN,315
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)
MOSFET 30V Single N-channel Trench MOSFET (1 piece)
Brand: NXP Semiconductors
Catalog
FeatureManufacturer: NXP Product Category: MOSFET Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 30 V Id - Continuous Drain Current: 930 mA Rds On - Drain-Source Resistance: 380 mOhms Configuration: Single Vgs th - Gate-Source Threshold Voltage: 1 V Qg - Gate Charge: 0.65 nC Maximum Operating Temperature: + 150 C Pd - Power Dissipation: 2700 mW Mounting Style: SMD/SMT
CategoryIndustrial & Scientific
MPNPMZB380XN,315
Product groupBISS
Product typeELECTRONIC_COMPONENT
ManufacturerNXP Semiconductors
View on Amazon (paid link)