| Alternate Part No. | 511-STD4NK80Z-1 |
| Base Product Number | STD4NK80 |
| Brand, Manufacturer, Mfr | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Channel Mode | Enhancement |
| Configuration | Single |
| Current - Continuous Drain (Id) @ 25?C | 3A (Tc) |
| Drain to Source Voltage (Vdss), Vds - Drain-Source Breakdown Voltage | 800 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| ECCN EU | EAR99 |
| ECCN US | IPAK |
| Fall Time | 32 ns |
| FET Feature | - |
| FET Type, Transistor Polarity | N-Channel |
| Gate Charge (Qg) (Max) @ Vgs | 22.5 nC @ 10 V |
| Grade | Ecopack2 |
| Id - Continuous Drain Current | 3 A |
| Input Capacitance (Ciss) (Max) @ Vds | 575 pF @ 25 V |
| Manufacturer Part No. | STD4NK80Z-1 |
| Maximum Operating Temperature | + 150 C |
| Minimum Operating Temperature | - 55 C |
| Mounting Style, Mounting Type | Through Hole |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package / Case | TO-251-3 Short Leads, IPak, TO-251AA |
| Package Name | Industrial |
| Package, Packaging, RoHs compliant | Tube |
| Package/Case | IPAK-3 |
| Packing Type | NEC |
| Part Status | Active |
| Pd - Power Dissipation | 80 W |
| Power Dissipation (Max) | 80W (Tc) |
| Product Category | MOSFET |
| Qg - Gate Charge | 22.5 nC |
| Rds On (Max) @ Id, Vgs | 3.5Ohm @ 1.5A, 10V |
| Rds On - Drain-Source Resistance | 3.5 Ohms |
| Rise Time | 12 ns |
| Series | SuperMESH?, STD4NK80Z |
| Supplier Device Package | TO-251 (IPAK) |
| Technology | MOSFET (Metal Oxide) |
| Typical Turn-Off Delay Time | 35 ns |
| Vgs (Max) | ?30V |
| Vgs - Gate-Source Breakdown Voltage | 30 V |
| Vgs(th) (Max) @ Id | 4.5V @ 50?A |