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Description:
ONSEMI FDD10N20LZTM | Transistor: N-MOSFET; unipolar; 200V; 4.5A; Idm: 30A; 83W; DPA
Attributes
| Key ^ | Value |
|---|---|
| Case | DPAK |
| Drain current | 4.5A |
| Drain-source voltage | 200V |
| Gate charge | 16nC |
| Gate-source voltage | ?20V |
| Kind of channel | enhanced |
| Kind of package | reel, |
| Manufacturer | ONSEMI |
| Mounting | SMD |
| On-state resistance | 0.38? |
| Polarisation | unipolar |
| Power dissipation | 83W |
| Pulsed drain current | 30A |
| Type of transistor | N-MOSFET |