| Base Product Number | FJV311 |
| Category | Discrete Semiconductor Products |
| Current - Collector (Ic) (Max) | 100 mA |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 68 @ 5mA, 5V |
| Dimensions | 2.92 x 1.3 x 0.93mm |
| Frequency - Transition | 250 MHz |
| Height | 0.93mm |
| Length | 2.92mm |
| Maximum Collector Emitter Saturation Voltage | 0.3 V |
| Maximum Collector Emitter Voltage | 50 V |
| Maximum Continuous Collector Current | 100 mA |
| Maximum Emitter Base Voltage | 10 V |
| Maximum Operating Temperature | +150 ?C |
| Maximum Power Dissipation | 200 mW |
| Mfr | Fairchild Semiconductor |
| Minimum DC Current Gain | 68 |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Package | Bulk |
| Package / Case | TO-236-3, SC-59, SOT-23-3 |
| Package Type | SOT-23 |
| Part Status | Active |
| Pin Count | 3 |
| Power - Max | 200 mW |
| Resistor - Base (R1) | 2.2 kOhms |
| Resistor - Emitter Base (R2) | 47 kOhms |
| Series | - |
| Supplier Device Package | SOT-23-3 (TO-236) |
| Transistor Configuration | Single |
| Transistor Type | NPN, NPN - Pre-Biased |
| Typical Input Resistor | 2.2 k? |
| Typical Resistor Ratio | 0.047 |
| Vce Saturation (Max) @ Ib, Ic | 300mV @ 500?A, 10mA |
| Voltage - Collector Emitter Breakdown (Max) | 50 V |
| Width | 1.3mm |
