| @Ic (A) | 1.0m |
| @VCE (test) (V) | 6.0 |
| C(ob) (F) | 1.8p |
| Case | TO92 |
| Collector Capacitance (Cc) | 1.8 pF |
| Derate (Amb) (W/?C) | 2.0m |
| Forward Current Transfer Ratio (hFE), MIN, hfe | 250 |
| Ic Max. (A) | 50m |
| Icbo Max. @Vcb Max. (A) | 100n |
| Manufacturer | Mitsubishi |
| Max. Operating Junction Temperature (Tj) | 125 ?C |
| Max. PD (W) | 200m |
| Maximum Collector Current |Ic max| | 0.05 A |
| Maximum Collector Power Dissipation (Pc) | 0.2 W |
| Maximum Collector-Base Voltage |Vcb|, Maximum Collector-Emitter Voltage |Vce| | 120 V |
| Maximum Emitter-Base Voltage |Veb| | 5 V |
| Oper. Temp (?C) Max. | 125 |
| Pinout Equivalence Number | 3-15 |
| Polarity | NPN |
| SKU | 395079 |
| Surface Mounted Yes/No | NO |
| Trans. Freq (Hz) Min. | 150M |
| Transition Frequency (ft): | 150 MHz |
| Type | Transistor Silicon NPN |
| Vbr CBO, Vbr CEO | 120 |