| Key ^ | Value |
|---|---|
| Case | TO263 |
| Drain current | 60A |
| Drain-source voltage | 100V |
| Features of semiconductor devices | thrench gate power mosfet |
| Gate charge | 49nC |
| Kind of channel | enhanced |
| Kind of package | tube |
| Manufacturer | IXYS |
| Mounting | SMD |
| On-state resistance | 18m? |
| Polarisation | unipolar |
| Power dissipation | 176W |
| Reverse recovery time | 59ns |
| Type of transistor | N-MOSFET |