| Category | Discrete Semiconductor Products |
| Channel Type | P |
| Configuration | Quad Drain, Triple Source |
| Current - Continuous Drain (Id) @ 25?C | 8A (Tc) |
| Dimensions | 5 x 4 x 1.5 mm |
| Drain Current | -8 A |
| Drain to Source On Resistance | 0.035 ? |
| Drain to Source Voltage (Vdss) | 30 V |
| Drain to Source Voltage, Voltage, Breakdown, Drain to Source | -30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| FET Feature | - |
| FET Type, Polarization | P-Channel |
| Forward Transconductance | 11 S |
| Forward Voltage, Diode | -1.2 V |
| Gate Charge (Qg) (Max) @ Vgs | 60 nC @ 10 V |
| Gate to Source Voltage | ? 20 V |
| Height | 0.059" (1.5mm) |
| Input Capacitance | 2320 pF @ -15 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2320 pF @ 15 V |
| Length | 0.196" (5mm) |
| Maximum Operating Temperature | +150 ?C |
| Mfr | Infineon Technologies |
| Minimum Operating Temperature | -55 ?C |
| Mounting Type | Surface Mount |
| Number of Elements per Chip | 1 |
| Number of Pins | 8 |
| Operating Temperature | -55?C ~ 150?C (TJ) |
| Package | Tube |
| Package / Case | 8-SOIC (0.154", 3.90mm Width) |
| Package Type | SO-8 |
| Part Status | Discontinued at Digi-Key |
| Power Dissipation | 2.5 W |
| Power Dissipation (Max) | 2.5W (Ta) |
| Product Header | Hexfet? Power MOSFET |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 8A, 10V |
| Series | HEXFET?, HEXFET Series |
| Supplier Device Package | 8-SO |
| Technology | MOSFET (Metal Oxide) |
| Temperature Operating Range | -55 to +150 ?C |
| Total Gate Charge | 40 nC |
| Turn Off Delay Time | 130 ns |
| Turn On Delay Time | 16 ns |
| Typical Gate Charge @ Vgs | 40 nC @ -10 V |
| Vgs (Max) | ?20V |
| Vgs(th) (Max) @ Id | 1V @ 250?A |
| Width | 0.157" (4mm) |
