mpn
IRFB3207PBF
brand
name: Infineon
manufacturer
name: Infineon
Attributes
Key
Value
Application
High efficiency synchro.
Channel Type
N
Configuration
Single
Dimensions
10.66 x 4.82 x 9.02 mm
Drain Current
170 A
Drain to Source On Resi.
4.5 mOhms
Drain to Source Voltage
75 V
Fall Time
74 ns (Typ.)
Forward Transconductance
150 S
Forward Voltage, Diode
1.3 V
Gate to Source Voltage
?20 V
Height
0.355" (9.02mm)
Input Capacitance
7600 pF @ 50 V
Junction to Ambient The.
62 ?C?W
Length
0.419 in
Maximum Operating Tempe.
+175 ?C
Minimum Operating Tempe.
-55 ?C
Mounting Type
Through Hole
Number of Elements per .
1
Number of Pins
3
Operating and Storage T.
-55 to +175 ?C (Max.)
Package Type
TO-220AB
Polarization
N-Channel
Power Dissipation
300 W
Product Header
Hexfet? Power MOSFET
Resistance, Thermal, Ju.
0.45 ?C/W (Max.)
Series
HEXFET Series
Temperature Operating R.
-55 to +175 ?C
Total Gate Charge
180 nC
Turn Off Delay Time
68 ns
Turn On Delay Time
29 ns
Typical Gate Charge @ V.
180 nC @ 10 V
Voltage, Breakdown, Dra.
75 V
Width
0 in